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| BPY 12 BPY 12 H 1 Silizium-PIN-Fotodiode Silicon-PIN-Photodiode BPY 12 BPY 12 H 1 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 25 ns) Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 25 ns) Applications q Industrial electronics q For control and drive circuits feo06697 fso06016 BPY 12 BPY 12 H 1 Typ Type BPY 12 BPY 12 H 1 Grenzwerte Maximum Ratings Bezeichnung Description Bestellnummer Ordering Code Q62702-P9 Q62702-P1029 Symbol Symbol Wert Value - 55 ... + 100 20 150 Einheit Unit C V mW Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Top; Tstg VR Ptot Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 180 ( 100) 920 400 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current A LxB LxW 20 4.47 x 4.47 mm2 mm 60 10 ( 100) Grad deg. nA IR BPY 12 BPY 12 H 1 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 5 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient fur VO Temperature coefficient of VO Temperaturkoeffizient fur ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 20 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.60 0.86 365 ( 310) 180 25 Einheit Unit A/W Electrons Photon mV A ns S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 140 - 2.6 0.15 9.4 x 10-14 V pF mV/K %/K W Hz cm * Hz W D* 4.7 x 1012 BPY 12 BPY 12 H 1 Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), VR = 10 V, E = 0 Directional characteristics Srel = f () |
Price & Availability of Q62702-P1029
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